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Ferroelectric Thin Films VI: Volume 493

Desu, Seshu B.(Edited by)Foster, Christopher M.(Edited by)Jones, Robert E.(Edited by)Treece, Randolph Edward(Edited by)Yoo, In K.(Edited by)
Part of the MRS Proceedings series
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This book on ferroelectric thin films, presents a wide range of topics spanning basic academic research to applied integration issues.

Fundamental materials studies, growth methods, device and materials integration research, and developments in the design and growth of new materials, all involving epitaxial, polycrystalline and nanocrystalline ferroelectric thin films, are featured.

In addition, since ULSI chip manufacturers are seriously considering incorporating ferroelectric DRAM technology into existing fabrication facilities, the industrial interest and resulting research is causing an explosion in ferroelectrics.

To that end, the volume presents the latest technical information on ferroelectric thin films from academia, government organizations and industry as well.

Topics include: high-permittivity DRAM materials; domains and size effects; barriers and electrodes; bilayered ferroelectrics; Pb-based ferroelectrics; microwave and optical devices; materials for piezoelectric MEMs; and novel ferroelectric devices.

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Product Details
Cambridge University Press
1107413486 / 9781107413481
Paperback
05/06/2014
United Kingdom
550 pages, black & white illustrations
152 x 229 mm, 730 grams
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